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NSS12100XV6T1G 12 V, 1 A, Low VCE(sat) PNP Transistor
ON Semiconductor's e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical application are DC-DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU's control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers.
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12 VOLTS, 1.0 AMPS PNP LOW VCE(sat) TRANSISTOR EQUIVALENT RDS(on) 300 mW
COLLECTOR 1, 2, 5, 6 3 BASE 4 EMITTER
* * * * *
High Current Capability (1 A) High Power Handling (Up to 650 mW) Low VCE(s) (150 mV Typical @ 500 mA) Small Size This is a Pb-Free Device
1 SOT-563 CASE 463A STYLE 4
Benefits
* High Specific Current and Power Capability Reduces Required PCB Area * Reduced Parasitic Losses Increases Battery Life
MAXIMUM RATINGS (TA = 25C)
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Collector Current - Peak Electrostatic Discharge Symbol VCEO VCBO VEBO IC ICM ESD Max -12 -12 -5.0 -1.0 -2.0 Unit Vdc Vdc Vdc Adc
DEVICE MARKING
VE M G G
1
VE = Specific Device Code M = Month Code G = Pb-Free Package (Note: Microdot may be in either location)
HBM Class 3 MM Class C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
Device NSS12100XV6T1G Package Shipping
SOT-563 4000/Tape & Reel (Pb-Free)
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
(c) Semiconductor Components Industries, LLC, 2006
November, 2006 - Rev. 0
1
Publication Order Number: NSS12100XV6/D
NSS12100XV6T1G
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Total Device Dissipation TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Lead 6 Total Device Dissipation (Single Pulse < 10 sec.) Junction and Storage Temperature Range Symbol PD (Note 1) Max 500 4.0 RqJA (Note 1) PD (Note 2) 250 650 5.2 RqJA (Note 2) RqJL PD Single TJ, Tstg 192 105 1.0 -55 to +150 Unit mW mW/C C/W mW mW/C C/W C/W W C
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Collector -Emitter Breakdown Voltage, (IC = -10 mAdc, IB = 0) Collector -Base Breakdown Voltage, (IC = -0.1 mAdc, IE = 0) Emitter -Base Breakdown Voltage, (IE = -0.1 mAdc, IC = 0) Collector Cutoff Current, (VCB = -12 Vdc, IE = 0) Emitter Cutoff Current, (VCES = -5.0 Vdc, IE = 0) ON CHARACTERISTICS DC Current Gain (Note 3) (IC = -10 mA, VCE = -2.0 V) (IC = -500 mA, VCE = -2.0 V) (IC = -1.0 A, VCE = -2.0 V) Collector -Emitter Saturation Voltage (Note 3) (IC = -0.05 A, IB = -0.005 A) (Note 4) (IC = -0.1 A, IB = -0.002 A) (IC = -0.1 A, IB = -0.010 A) (IC = -0.5 A, IB = -0.050 A) (IC = -1.0 A, IB = -0.100 A) Base -Emitter Saturation Voltage (Note 3) (IC = -1.0 A, IB = -0.01 A) Base -Emitter Turn-on Voltage (Note 3) (IC = -2.0 A, VCE = -3.0 V) Input Capacitance (VEB = -0.5 V, f = 1.0 MHz) Output Capacitance (VCB = -3.0 V, f = 1.0 MHz) 1. 2. 3. 4. FR-4 @ 100 1 oz copper traces. FR-4 @ 500 1 oz copper traces. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle 2%. Guaranteed by design but not tested. mm2, mm2, hFE 200 100 90 - - - - - - - - - - - - -0.030 -0.080 -0.050 -0.200 -0.400 0.95 -1.05 - - - -0.040 -0.100 -0.060 -0.225 -0.440 -1.15 -1.15 50 20 V V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO -12 -12 -5.0 - - - - - -0.02 -0.03 - - - -0.1 -0.1 Vdc Vdc Vdc mAdc mAdc Symbol Min Typ Max Unit
VCE(sat)
VBE(sat) VBE(on) Cibo Cobo
V V pF pF
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NSS12100XV6T1G
1.0 VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V) VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) 10 -55C IC/IB = 10 VCE(sat) = 150C 25C 3.0 IC/IB = 100 2.5 2.0 150C 1.5 1.0 0.5 0 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) 10 VCE(sat) = -55C 25C
Figure 1. Collector Emitter Saturation Voltage vs. Collector Current
600 hFE, DC CURRENT GAIN 500 400 300 200 100 0
Figure 2. Collector Emitter Saturation Voltage vs. Collector Current
1.4
150C (5.0 V) 150C (2.0 V) 25C (5.0 V) 25C (2.0 V) -55C (5.0 V) -55C (2.0 V) VBE(sat), BASE EMITTER SATURATION VOLTAGE (V) 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10
IC/IB = 10
TA = -55C 25C 150C
0.001
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain vs. Collector Current
VBE(on), BASE EMITTER TURN-ON VOLTAGE (V) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) 150C TA = -55C VCE, COLLECTOR-EMITTER VOLTAGE (V) 1.0 0.8 0.6 0.4 0.2 0
Figure 4. Base Emitter Saturation Voltage vs. Collector Current
VCE = -1.0 V
10 mA
100 mA
300 mA
IC = 500 mA
25C
0.01
0.1
1
10
100
IB, BASE CURRENT (mA)
Figure 5. Base Emitter Turn-On Voltage vs. Collector Current
Figure 6. Saturation Region
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NSS12100XV6T1G
50 Cobo, OUTPUT CAPACITANCE (pF) Cibo, INPUT CAPACITANCE (pF) 45 40 35 30 25 20 30 25 20 15 10 5 0 0 1 2 3 4 5 6 7 8 9 VCB, COLLECTOR BASE VOLTAGE (V) 10 Cobo(pF)
Cibo(pF)
0
1 3 4 2 VEB, EMITTER BASE VOLTAGE (V)
5
Figure 7. Input Capacitance
Figure 8. Output Capacitance
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NSS12100XV6T1G
PACKAGE DIMENSIONS
SOT-563, 6 LEAD CASE 463A-01 ISSUE F
D -X-
6 5 4
A
L
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. MILLIMETERS MIN NOM MAX 0.50 0.55 0.60 0.17 0.22 0.27 0.08 0.12 0.18 1.50 1.60 1.70 1.10 1.20 1.30 0.5 BSC 0.10 0.20 0.30 1.50 1.60 1.70 INCHES NOM MAX 0.021 0.023 0.009 0.011 0.005 0.007 0.062 0.066 0.047 0.051 0.02 BSC 0.004 0.008 0.012 0.059 0.062 0.066 MIN 0.020 0.007 0.003 0.059 0.043
1
2
3
E -Y- b 6 PL 5 0.08 (0.003)
HE
DIM A b C D E e L HE
e
C
M
XY
STYLE 4: PIN 1. COLLECTOR 2. COLLECTOR 3. BASE 4. EMITTER 5. COLLECTOR 6. COLLECTOR
SOLDERING FOOTPRINT*
0.3 0.0118 0.45 0.0177 1.35 0.0531 1.0 0.0394
0.5 0.5 0.0197 0.0197
SCALE 20:1 mm inches
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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NSS12100XV63/D

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